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AEGIS
SEMICONDUTORES LTDA.
A5A:6100.XX
VOLTAGE RATINGS
Part Number VRRM , VR - (V) rep. peak reverse voltage TJ = 0 to 200OC A5A:6100.02 A5A:6100.04 A5A:6100.06 A5A:6100.08 A5A:6100.10 A5A:6100.12 200 400 600 800 1000 1200 Max. VRSM , VR - (V) Max. nonrep. peak reverse voltage TJ = 25 to 200OC 300 500 700 900 1100 1300
TJ = -40 to 0OC 200 400 600 800 1000 1200
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 200 -40 to 200 6100 100 9580 63.8 IFSM Max. Peak non-rep. surge current 69.5 kA 75.8 82.6 18440 20100 I t Max. I t capability 26055 28400 It
2 1/2 2 2
UNITS
O O
NOTES 180 O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 200O C, rated VRRM applied after surge.
O
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 200 C, no voltage applied after surge.
Initial TJ = 200 OC, rated VRRM applied after surge.
kA2s
t = 8.3 ms t = 10ms t = 8.3 ms Initial TJ = 200OC, no voltage applied after surge.
2
Max. I t
2 1/2
capability
311000 4550
kA s
2 1/2
Initial TJ = 200O C, no voltage applied after surge. for time tx = I t
2 1/2
It
*
1/2 tx .
(0.1 < tx < 10ms). -
F Mounting Force
N.m
AEGIS
SEMICONDUTORES LTDA.
A5A:6100.XX
CHARACTERISTICS
PARAMETER VFM peak on-state voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------------TYP. ----------200 --------1590(55.3) TO-200AE MAX. 1.52 0.778 0.923 0.044 0.064 0.011 0.012 0.012 0.006 --O
UNITS V V mW mA
O O O
TEST CONDITIONS Initial TJ = 25 C, 50-60Hz half sine, I eak = 19154A. p O TJ = 200 C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)] , 180 Half Sine. Use low values for ITM < p rated IT(AV) TJ = 200O C, Rated VRRM
2
C/W DC operation, double side cooled. C/W 180O sine wave, double side coolde. C/W 120O rectangular wave, double side cooled. C/W Mtg. Surface smooth, flat and greased. Double side cooled. -----
O
g(oz.) JEDEC
200
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature
200
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
190 180 170 160 150 140 130 120 110 100 90
90 30 60
190 180 170 160 150 140 130 120 110 100 90 80 70 60 0 1000 2000 3000 4000 5000
*Rectangular waveform 30 60 90 120 DC 180
80 70 60 0 1000 2000 3000 4000
120 180
5000
6000
6000
7000
8000
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:6100.XX
Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W)
70000 60000 50000 40000 30000
90 30
60000
Maximum Average Forward Power Loss
30
50000
40000
60
60
30000
90
20000 10000 0
*Sinusoidal waveform
120 180
20000
120 180
10000
DC
0 0 1250 2500 3750 5000 6250 7500 8750 10000
*Rectangular waveform
0
1250
2500
3750
5000
6250
7500
8750
10000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Average Forward Power Loss Characteristics
Fig. 4 - Average Forward Power Loss Characteristics
100000
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
Instantaneous Forward Current (A)
10000
0.01
1000
1E-3
100
1E-4
125C
10 0.0 0.5
25C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1E-5 1E-3
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance ZthJC Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:6100.XX TO-200AE
Fig. 7 - Outline Characteristics

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